Samsung has been a leading memory manufacturer for years and today the company announced that it’s starting production of its next-generation V-NAND memory chips. This is the fifth iteration of the technology and the key feature here is the adoption of “Toggle DDR 4.0” NAND interface.
The latter allows for 40% faster transfer speeds between storage and RAM compared to its predecessor reaching a peak of 1.4Gbps. But along with the better performance, the new memory delivers better power efficiency as well – 1.8 volts down to 1.2 volts.
The 5th-gen V-NAND chips are built similarly…